1 this document is subject to change without notice. date published: july 2016 cds - 0019 - 04 (issue a) description ? super low noise and high gain ? hollow (air cavity) plastic package features ? super low noise figure and high associated gain : nf = 0.55 db typ., ga = 13.8 db typ. @v ds = 2 v, i d = 10 ma, f = 20 ghz ordering information package ? micro - x plastic package applications ? dbs lnb gain - stage, mix - stage ? low noise amplifier for microwave communication system s part number order number package marking d escription c e3520k3 c e3520k3 - c 1 micro - x plastic package c 6 ? ? ? rf low noise fet c e3520k3 enter a short document/title name here 20 ghz super low noise fet in hollow plastic pkg
c e3520k3 this document is subject to change without notice. 2 pin configuration an d internal block diagram absolute maximum ratings (t a = +25?c , unless otherwise specified) parameter symbol rating unit drain to source voltage v ds 4.0 v gate to source voltage v gs - 3.0 v drain current i d i dss ma gate current i g 80 a total power dissipation p tot 125 mw channel temperature t ch +1 50 c storage temperature t stg - 5 5 to +125 c operation temperature t op - 55 to +125 note c note refer to total power dissipation vs. ambient tempera ture graph on page 4 recommended operating range (t a = +25?c , unless otherwise specified) parameter symbol min. typ. max. unit drain to source voltage v ds +1 +2 +3 v drain current i d 5 10 15 ma pin no. pin name 1 source 2 drain 3 source 4 gate
c e3520k3 this document is subject to change without notice. 3 electrical characteristics (t a = +25?c , unless otherwise specified) parameter symbol condition min. typ. max. unit gate to source leak current i gso v gs = - 3.0v - 0. 4 10 a saturated drain current i dss v ds = 2v, v gs = 0v 23 4 0 57 ma gate to source cut - off voltage v gs(off) v ds = 2v, i d = 100a - 1.10 - 0.75 - 0.39 v transconductance gm v ds = 2v, i d = 1 0ma 47 62 - ms noise figure nf v ds = 2v, i d = 10ma, f = 20ghz - 0. 55 0 . 80 db associated gain ga 11.5 13.8 - db
c e3520k3 this document is subject to change without notice. 4 typical characteristics : (ta=+25 , unless otherwise specified) total power dissipation vs. ambient temperature drain current vs. drain to source voltage drain current vs. gate to source voltage minimum noise figure & associated gain vs. drain current
c e3520k3 this document is subject to change without notice. 5 s - parameters s - parameters are available on the cel web site. recommended soldering conditions recommended soldering conditions are provided on the cel web site. package dimensions micro - x plastic package
c e3520k3 this document is subject to change without notice. 6 revision history version change to current version page(s) cds - 00 19 - 03 (issue a) february 12 , 2016 initial datasheet n/a cds - 0019 - 03 (issue b ) april 27 , 2016 updated marking information 1, 2, 3 cds - 0019 - 04 (issue a ) july 2 9 , 2016 updated specs in absolute maximum ratings table added typical characteristics section (graphs) added s - paramet ers and recommended soldering conditions sections 2 , 4, 5
c e3520k3 this document is subject to change without notice. 7 [ caution ] ? all information included in this document is current as of the date this document is issued. such information, however, is subject to change without any prior notice. ? you should not alter, modify, copy, or otherwise misappropriate any cel product, whether in whole or in part. ? cel does not assume any liability for infringement of patents, copyrig hts, or other intellectual property rights of third parties b y or arising from the use of cel products or technical information described in this document. no license, express ed , implied or otherwise, is granted hereby under any patents, copyrights or oth er int ellectual property rights of cel or others. ? descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. you are fully responsibl e for the incorporation of these circuits, software, and information in th e design of your equipment. cel assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. ? cel has used reasonable care in preparing the information in cluded in this document, but cel does not warrant that such information is error free. c el assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the i nformation included herein. ? although cel endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditio ns. please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of t he failure of a cel product, such as safety design for hardware and software including but not l imited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. ? please use cel products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the eu rohs directive. cel assumes no liabili ty for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. ? this document may not be reproduced or duplicated, in any form, in whole or in part, with out prior written consent of cel . ? please contact cel if you have any questions regarding the information c ontained in this document or cel products, or if you have any other inquiries.
c e3520k3 this document is subject to change without notice. 8 [c aution ] this product uses gallium arsenide (gaas) of the toxic substance appointed in laws and ordinances. gaas vapor and powder are hazardous to human health if inhaled or ingested. ? do not dispose in fire or break up this product. ? do not chemically make gas or powder with this product. ? when discard ing this product, please obey the law s of your country. ? do not lick the product or in any way allow it to enter the mouth . [ caution ] although this device is designed to be as robust as possible, esd (electrostatic dischar ge) can damage this device. this device must be protected at all times from esd. static charges may easily produce potentials of several kilovolts on the human body or equipment, which can discharge without detection. industry - standard esd precautions should be used at all times. cel headquarters ? 4590 patrick henry drive ? santa clara, ca 95054 ? tel: (408) 919 - 2500 ? www.cel.com for a complete list of sales offices, representatives and distributors, please visit our website: www.cel.com/contactus for inquiries email us at rfw@cel.com
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